Suzhou Nanowin Science and Technology Co., Ltd

苏州纳维科技有限公司 苏州纳维创办以来,在江苏省重大成果转化项目、苏州市各级人才项目支持下,经过10年攻关完成了从材料生长设备的自主研发到GaN单晶衬底生长制备的完整工艺开发,2英寸GaN单晶衬底的位错密度降低到10⁴cm²,达到世界先进水平,期间相继得到科技部863项目和国家发改委产业化示范项目的支持

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